DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TCM809 View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
TCM809
Microchip
Microchip Technology Microchip
TCM809 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TCM809/TCM810
ELECTRICAL CHARACTERISTICS (CONTINUED)
VDD = Full Range, TA = Operating Temperature Range, unless otherwise noted. Typical values are at TA = +25°C,
VDD = 5V for L/M/J, 3.3V for T/S, 3.0V for R and 2.5V for Z (Note 1).
Parameter
Sym
Min
Typ
Max Units
Test Conditions
RESET Output Voltage
VOL
Low (TCM809)
0.3
V TCM809R/S/T/Z: VDD = VTH min, ISINK = 1.2 mA
0.4
TCM809L/M/J:
VDD = VTH min, ISINK = 3.2 mA
0.3
VDD > 1.0V, ISINK = 50 µA
RESET Output Voltage
VOH 0.8 VDD
V TCM809R/S/T/Z: VDD > VTH max, ISOURCE = 500 µA
High (TCM809)
VDD – 1.5
TCM809L/M/J: VDD > VTH max, ISOURCE = 800 µA
RESET Output Voltage
VOL
Low (TCM810)
0.3
V TCM810R/S/T/Z:VDD = VTH max, ISINK = 1.2 mA
0.4
TCM810L/M: VDD = VTH max, ISINK = 3.2 mA
RESET Output Voltage
VOH 0.8 VDD
V 1.8 < VDD < VTH min, ISOURCE = 150 µA
High (TCM810)
Note 1: Production testing done at TA = +25°C, overtemperature limits ensured by QC screen.
2: RESET output for TCM809, RESET output for TCM810.
2004 Microchip Technology Inc.
DS21661C-page 3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]