SPC5200CBV400B View Datasheet(PDF) - Freescale Semiconductor
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Description
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SPC5200CBV400B Datasheet PDF : 72 Pages
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Table 2. Recommended Operating Conditions (continued)
Characteristic
Sym
Min(1)
Max(1)
Unit SpecID
Input voltage — standard I/O buffers
Vin
0
VDD_IO
V
D2.7
Input voltage — memory I/O buffers (SDR)
VinSDR
0
VDD_MEM_IOSDR V
D2.8
Input voltage — memory I/O buffers (DDR)
Ambient operating temperature range(2)
Die junction operating temperature range
VinDDR
TA
Tj
0
VDD_MEM_IODDR V
D2.9
–40
+85
oC D2.10
–40
+115
oC D2.12
1 These are recommended and tested operating conditions. Proper device operation outside these conditions is not
guaranteed.
2 Maximum e300 core operating frequency is 400 MHz.
1.1.3 DC Electrical Specifications
Table 3 gives the DC Electrical characteristics for the MPC5200B at recommended operating conditions (see Table 2).
Table 3. DC Electrical Specifications
Characteristic
Condition
Sym
Min
Input high voltage
Input type = TTL
VIH
2.0
VDD_IO/VDD_MEM_IOSDR
Input high voltage
Input type = TTL
VDD_MEM_IODDR
VIH
1.7
Input high voltage
Input type = PCI
VDD_IO
VIH
2.0
Input high voltage
Input type = SCHMITT
VDD_IO
VIH
2.0
Input high voltage
Input high voltage
Input low voltage
Input low voltage
Input low voltage
SYS_XTAL_IN
CVIH
2.0
RTC_XTAL_IN
CVIH
2.0
Input type = TTL
VIL
—
VDD_IO/VDD_MEM_IOSDR
Input type = TTL
VDD_MEM_IODDR
VIL
—
Input type = PCI
VDD_IO
VIL
—
Input low voltage
Input type = SCHMITT
VIL
—
VDD_IO
Input low voltage
SYS_XTAL_IN
CVIL
—
Input low voltage
RTC_XTAL_IN
CVIL
—
Input leakage current
Vin = 0 or
IIN
—
VDD_IO/VDD_IO_MEMSDR
(1)
(depending on input type )
Input leakage current
SYS_XTAL_IN
Vin = 0 or VDD_IO
IIN
—
Max
Unit SpecID
—
V
D3.1
—
V
D3.2
—
V
D3.3
—
V
D3.4
—
V
D3.5
—
V
D3.6
0.8
V
D3.7
0.7
V
D3.8
0.8
V
D3.9
0.8
V D3.10
0.8
V D3.11
0.8
V D3.12
±2
μA D3.13
±10
μA D3.14
MPC5200B Data Sheet, Rev. 4
Freescale Semiconductor
5
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