BC846BPDW1T1G(2010) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC846BPDW1T1G
(Rev.:2010)

Dual General Purpose Transistors NPN/PNP Duals (Complementary)

ON Semiconductor 

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

TYPICAL NPN CHARACTERISTICS − BC846

500

150°C

400

VCE = 1 V

300 25°C

200 −55°C

100

0

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain vs. Collector

Current

1.1

1.0 IC/IB = 20

0.9

0.8 −55°C

0.7 25°C

0.6

0.5

0.4 150°C

0.3

0.2

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

0.30

0.25

IC/IB = 20

0.20

0.15

0.10 150°C

25°C

0.05 −55°C

0

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

1.2

1.1

VCE = 5 V

1.0

0.9

−55°C

0.8

25°C

0.7

0.6

150°C

0.5

0.4

0.3

0.2

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 4. Base Emitter Voltage vs. Collector

Current

2.0

-1.0

TA = 25°C

1.6

-1.4

20 mA 50 mA 100 mA

200 mA

1.2

0.8

IC =

10 mA

-1.8

qVB for VBE

-55°C to 125°C

-2.2

0.4

-2.6

0

0.02

0.05 0.1

0.2 0.5 1.0 2.0

IB, BASE CURRENT (mA)

5.0 10 20

Figure 5. Collector Saturation Region

-3.0

0.2

0.5 1.0 2.0 5.0 10 20 50 100 200

IC, COLLECTOR CURRENT (mA)

Figure 6. Base−Emitter Temperature Coefficient

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