F7103QBPF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

F7103QBPF

HEXFET® Power MOSFET

International Rectifier 

IRF7103QPbF

3.0

2.4

1.8

1.2

0.6

0.0

25

50

75 100 125 150 175

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

D = 0.50

10

0.20

0.10

0.05

0.02

1

0.01

VDS

VGS

RG

RD

D.U.T.

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

0.1

0.01

1E-006

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T A

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

10

100

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com

5

Share Link: