IRG7IA13UPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRG7IA13UPBF Datasheet PDF : 7 Pages
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PDP TRENCH IGBT
PD - 97636A
IRG7IA13UPbF
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
360
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
1.42
V
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
IRP max @ TC= 25°C
TJ max
160
A
150
°C
l High repetitive peak current capability
l Lead Free package
C
G
E
n-channel
E
C
G
TO-220 Full-Pak
IRG7IA13UPbF
G
G ate
C
C ollector
E
Em itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
c Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RJC
RCS
RJA
Wt
Parameter
d Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Max.
±30
20
10
160
34
14
0.27
-40 to + 150
300
10 lbf·in (1.1 N·m)
Typ.
–––
0.50
—
2.0
Max.
3.7
—
65
—
Units
V
A
W
W/°C
°C
Units
°C/W
g
www.irf.com
1
08/02/12
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