Si2305CDS(2009) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

Si2305CDS
(Rev.:2009)

P-Channel 8 V (D-S) MOSFET

Vishay Semiconductors 

SPICE Device Model Si2305CDS

Vishay Siliconix

COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted

1.4

ID = 4.4 A

1.3

0.10

ID = 4.4 A

0.08

1.2

VGS = 4.5 V, 2.5 V

1.1

0.06

1.0

0.04

TJ = 125 °C

0.9

0.02

TJ = 25 °C

0.8

0.7

- 50 - 25

0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

0.00

0

1

2

3

4

5

VGS - Gate-to-Source Voltage (V)

Note

Dots and squares represent measured data.

www.vishay.com

4

Document Number: 63580

S09-1680-Rev. A, 07-Sep-09

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