SI2305ADS-T1-E3(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI2305ADS-T1-E3 Datasheet PDF : 7 Pages
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Si2305ADS
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 175 °C/W.
Symbol
RthJA
RthJF
Typical
100
60
Maximum
130
75
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 8 V, VGS = 0 V
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 4.1 A
VGS = - 2.5 V, ID = - 3.4 A
VGS = - 1.8 V, ID = - 2.0 A
VDS = - 5 V, ID = - 4.1 A
VDS = - 4 V, VGS = 0 V, f = 1 MHz
VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
Fall Time
td(off)
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 4 V, VGS = - 2.5 V, ID = - 4.1 A
f = 1 MHz
VDD = - 4 V, RL = 1.2 Ω
ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 4 V, RL = 1.2 Ω
ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω
TC = 25 °C
IF = - 3.3 A
IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
-8
- 0.45
-5
1.4
Typ.
- 55
2.1
0.032
0.048
0.070
8
740
290
190
7.8
4.5
1.2
1.6
7
13
35
32
10
5
11
22
16
- 0.8
33
14
14
19
Max.
- 0.8
± 100
-1
- 10
0.040
0.060
0.088
15
9
14
20
53
48
20
10
17
33
24
- 1.4
- 10
- 1.2
50
21
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 69940
S-82713-Rev. C, 10-Nov-08
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