SM4T10CAY View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
SM4T10CAY Datasheet PDF : 12 Pages
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Characteristics
SM4TY
Figure 3. Peak pulse power dissipation versus
initial junction temperature
500 PPP(W)
Figure 4. Peak pulse power versus exponential
pulse duration
(Tj initial = 25 °C)
10.0 PPP(kW)
Pulse = 10/1000 µs
400
300
1.0
200
100
0
0
Tj(°C)
25
50
75
100
125
150
175
0.1
1.0E-03
1.0E-02
1.0E-01
tp(ms)
1.0E+00
1.0E+01
Figure 5. Clamping voltage versus peak pulse Figure 6. Junction capacitance versus reverse
current (exponential waveform, maximum applied voltage for unidirectional types (typical
values)
values)
1000.0 IPP(A)
Tjinitial = 25 °C
100.0
10.0
1.0
8/20 µs
10/1000 µs
C(pF)
10000
1000
SM4T6V7AY
F = 1 Mhz
VOSC = 30 mVRMS
Tj = 25 °C
SM4T30AY
100
SM4T82AY
0.1
1
VCL(V)
10
10
100
1000
1
VR(V)
10
100
1000
Figure 7. Junction capacitance versus reverse
Figure 8. Relative variation of thermal
applied voltage for bidirectional types (typical impedance, junction to ambient, versus pulse
values)
duration
C(pF)
10000
1000
SM4T6V7CAY
F = 1 Mhz
VOSC = 30 mVRMS
Tj = 25 °C
Zth(j-a)/Rth(j-a)
1.00
Recommended pad layout
Printed circuit board FR4,
copper thickness = 35 µm
100
10
1
0.10
SM4T30CAY
SM4T82CAY
VR(V)
0.01
tp(s)
10
100
1000
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
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DocID17862 Rev 4
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