1N4448W(2010) View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
1N4448W Datasheet PDF : 4 Pages
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1N4448W
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
100
75
53
500
250
4.0
1.0
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
400
315
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Peak Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VFM
IRM
CT
trr
Min
75
0.62
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
IR = 10μA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 4. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
500
100
400
300
RθJA = 315°C/W
10
200
100
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
1
0.1
0
200
400
600
800 1,000
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
1N4448W
Document number: DS12002 Rev. 18 - 2
2 of 4
www.diodes.com
November 2010
© Diodes Incorporated
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