2SK3325 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK3325 Datasheet PDF : 8 Pages
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2SK3325
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
2.0
ID = 10 A
1.0
ID = 5.0 A
0.0
–50
VGS = 10 V
0
50
100
150
Tch - Channel Temperature - ˚C
10000
1000
100
Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
10
Crss
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
Figure15. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
900
800
di/dt = 50 A/µs
VGS = 0 V
700
600
500
400
300
200
100
0
0.1
1
10
100
IF - Drain Current - A
Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
1 VGS = 10 V
0.1
VGS = 0 V
0.01
0.0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
Figure14. SWITCHING CHARACTERISTICS
1000
tr
100
10
1
0.1
tf
td(on)
td(off)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1
10
100
ID - Drain Current - A
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
ID = 10 A
700
14
600
VDD = 400 V
250 V
500
100 V
400
300
12
VGS 10
8
6
200
4
VDS
100
2
0
0
5
10
15
20
25
QG - Gate Charge - nC
Data Sheet D14264EJ1V0DS00
5
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