D613 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
Manufacturer
D613 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD613
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=5mA; IC=0
VCEsat
VBE
ICBO
IEBO
Collector-emitter saturation voltage IC=4A;IB=0.4 A
Base-emitter voltage
IC=1A ; VCE=5V
Collector cut-off current
VCB=40V; IE=0
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
fT
COB
DC current gain
Transition frequency
Output capacitance
IC=3A ; VCE=5V
IC=1A ; VCE=5V
IE=0; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
85
V
100
V
6
V
2.0
V
1.5
V
0.1
mA
0.1
mA
40
320
20
15
MHz
110
pF
hFE-1 classifications
C
D
E
F
40-80 60-120 100-200 160-320
2
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