STD10P6F6, STF10P6F6,
STP10P6F6, STU10P6F6
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet − production data
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
TAB
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
, TAB
Features
Order codes
STD10P6F6
STF10P6F6
STP10P6F6
STU10P6F6
VDS
-60 V
RDS(on) max
0.16 Ω
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
ID
-10 A
Applications
• Switching applications
Description
These devices are P-channel Power MOSFETs
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFETs exhibit very low RDS(on) in all
packages.
Order codes
STD10P6F6
STF10P6F6
STP10P6F6
STU10P6F6
AM11258v1
Table 1. Device summary
Marking
Package
DPAK
10P6F6
TO-220FP
TO-220
IPAK
Packing
Tape and reel
Tube
July 2015
This is information on a product in full production.
DocID022967 Rev 5
1/24
www.st.com