STP10P6F6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP10P6F6

P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage

VGS

(V)

VDD=30V

AM15341v2

10

ID=10A

8

6

4

2

Figure 9. Static drain-source on-resistance

RDS(on)

(mΩ)

VGS=10V

AM15350v1

180

160

140

120

0

0

2

4

6

Qg(nC)

100

1 2 3 4 5 6 7 8 9 ID(A)

Figure 10. Capacitance variations

C

(pF)

400

AM15342v1

350

Ciss

Figure 11. Normalized V(BR)DSS vs temperature

V(BR)DSS

(norm)

AM15349v1

1.15

ID = 1mA

300

1.10

250

1.05

200

150

1

100

50

0

0

Coss

Crss

10 20 30 40 50 VDS(V)

0.95

0.90

-55 -30 -5 20 45 70 95 120 TJ(°C)

Figure 12. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

AM15344v1

1.10

1

ID=250 µA

0.90

0.80

0.70

0.60

-55 -30 -5 20 45 70 95 120 TJ(°C)

Figure 13. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2

1.8

VGS=10V

AM15350v1

1.6

1.4

1.2

1

0.8

0.6

0.4

-55 -30 -5 20 45 70 95 120 TJ(°C)

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