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STPS40SM120CR(2018) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS40SM120CR
(Rev.:2018)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS40SM120CR Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
STPS40SM120C
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (per diode)
PF(AV)(W)
20
δ=0.5
δ=1
16
δ=0.2
δ=0.1
12
δ=0.05
8
4
0
0
4
T
IF(AV)( A)
δ=tp/T
tp
8
12
16
20
24
28
Figure 2. Average forward current versus ambient
temperature (δ = 0.5, per diode)
IF(AV)(A)
24
20
Rth(j-a)=Rth(j-c)
16
12
8
T
4
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
1 00
125
150
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
PARM (t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10
100
1000
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration
Zth(j-c/) Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-04
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
DS8940 - Rev 4
page 3/11

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