STPS40SM120C View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
STPS40SM120C Datasheet PDF : 9 Pages
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STPS40SM120C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 5 A
IF = 10 A
IF = 20 A
-
55
275
µA
-
20
50
mA
-
0.46
0.51
-
0.55
0.60
V
-
0.83
-
0.63
0.69
To evaluate the conduction losses use the following equation:
P = 0.52 x IF(AV) + 0.0085 x IF2(RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current (per
diode)
20 PF(AV)(W)
δ = 0.5
IF(AV)(A)
24
16
δ = 0.2
δ = 0.1
12
δ = 0.05
δ=1
20
16
12
8
8
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Rth(j-a) = Rth(j-c)
4
T
4
δ = tp / T tp
IF(AV)(A)
0
0
0
4
8
12
16
20
24
28
0
Tamb(°C)
25
50
75
100
125
150
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5.
Relative variation of thermal
impedance junction to case versus
pulse duration
PARM (t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
10
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 Single pulse
0.2
t p(µs)
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
100
1000
Doc ID 022917 Rev 1
3/9
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