IGB10N60T(2009) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IGB10N60T
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGB10N60T

p

Low Loss IGBT in TrenchStop® and Fieldstop technology

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5μs

• Designed for frequency inverters for washing machines, fans,

pumps and vacuum cleaners

• TrenchStop® technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

PG-TO263-3-2

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

IGB10N60T 600V 10A

1.5V

175°C

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current, limited by Tjmax

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C

Gate-emitter voltage

Short circuit withstand time2)

VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C

Power dissipation TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature (reflow soldering, MSL1)

Marking Code

G10T60

Symbol

VCE

IC

ICpuls

-

VGE

tSC

Ptot

Tj

Tstg

Package

PG-TO263-3-2

Value

600

20

10

30

30

±20

5

110

-40...+175

-55...+175

260

Unit

V

A

V

μs

W

°C

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 1.2 12.08.2009

Share Link: