SB5100E-G View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

SB5100E-G

ESD Leaded Schottky Barrier Rectifiers

Unspecified 

ESD Leaded Schottky Barrier Rectifiers

Comchip

SMD Diode Specialist

RATING AND CHARACTERISTIC CURVES (SB520E-G Thru. SB5100E-G)

Fig.1 Forward Current Derating Curve

6.0

5.0

4.0

SB520E-G ~ SB545E-G

3.0

Fig.2 Maximum Non-repetitive Peak

Forward Surge Current

200

TL=110°C

8.3mS single half sine-wave

(JEDEC Method)

150

100

SB520E-G ~ SB545E-G

2.0 SB550E-G ~ SB5100E-G

1.0 single phase half wave 60Hz

resistive or inductive load

3.75”(9.5mm) lead length

0

0

25

50

75

100

125 150 175

Lead Temperature ( OC)

50

SB550E-G ~ SB5100E-G

01

10

100

Number of Cycles at 60Hz

Fig.3 Typical Instantaneous Forward

Characteristics

50

10

SB580E-G ~ SB5100E-G

1

SB550E-G ~ SB560E-G

0.1

SB520E-G ~ SB545E-G

0.01

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Instantaneous Forward Voltage (V)

Fig.4A Typical Reverse Characteristics

100

SB520E-G ~ SB545E-G

10

TJ=125°C

1.0

0.1

TJ=100°C

0.01

TJ=25°C

0.001

0

20 40 60 80 100 120 140

Percent of Rated Peak Reverse Voltage (%)

Fig.5 Typical Junction Capacitance per leg

10,000

1,000

Fig.4B Typeical Reverse Characteristic

5

10

SB550E-G ~ SB5100E-G

4

TJ=150°C

10

TJ=125°C

3

10

2

10

TJ=75°C

TJ=25°C

f=1.0MHz

Vsig=50mVp-p

100

0.1

1.0

10

Reverse Voltage (V)

QW-BB043

1

10

TJ=25°C

1

0

20

40

60

80

100

100

Percent of Rated Peak Reverse Voltage ( %)

Comchip Technology CO., LTD.

REV:A

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