K4B4G1646B View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4B4G1646B

4Gb B-die DDR3 SDRAM

Samsung 

K4B4G1646B

datasheet

Rev. 1.0

DDR3 SDRAM

9.6 Overshoot/Undershoot Specification

9.6.1 Address and Control Overshoot and Undershoot specifications

[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2. CS. RAS. CAS. WE. CKE, ODT)

Parameter

Specification

Unit

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133

Maximum peak amplitude allowed for overshoot area (See Figure 9) 0.4V

0.4V

0.4V

0.4V

0.4V

0.4V

V

Maximum peak amplitude allowed for undershoot area (See Figure 9) 0.4V

0.4V

0.4V

0.4V

0.4V

0.4V

V

Maximum overshoot area above VDD (See Figure 9)

Maximum undershoot area below VSS (See Figure 9)

0.67V-ns

0.67V-ns

0.5V-ns

0.5V-ns

0.4V-ns

0.4V-ns

0.33V-ns 0.28V-ns 0.25V-ns V-ns

0.33V-ns 0.28V-ns 0.25V-ns V-ns

Maximum Amplitude

Overshoot Area

Volts VDD

(V)

VSS

Maximum Amplitude

Time (ns)

Undershoot Area

Figure 9. Address and Control Overshoot and Undershoot Definition

9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications

[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)

Parameter

Specification

Unit

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133

Maximum peak amplitude allowed for overshoot area (See Figure 10) 0.4V

0.4V

0.4V

0.4V

0.4V

0.4V

V

Maximum peak amplitude allowed for undershoot area (See Figure 10) 0.4V

0.4V

0.4V

0.4V

0.4V

0.4V

V

Maximum overshoot area above VDDQ (See Figure 10)

0.25V-ns 0.19V-ns 0.15V-ns 0.13V-ns 0.11V-ns 0.10V-ns V-ns

Maximum undershoot area below VSSQ (See Figure 10)

0.25V-ns 0.19V-ns 0.15V-ns 0.13V-ns 0.11V-ns 0.10V-ns V-ns

Maximum Amplitude

Overshoot Area

Volts

(V)

VDDQ

VSSQ

Maximum Amplitude

Time (ns)

Undershoot Area

Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot Definition

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