Si87xx
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
VDD Supply Voltage
Input Current
Si87xxA Devices
Si87xxB Devices
Si87xxC Devices
Operating Temperature (Ambient)
Symbol
Min
Typ
Max
Unit
VDD
3
IF(ON)
(see Figure 1)
3
6
3
—
30
V
—
15
mA
—
30
mA
—
15
mA
TA
–40
—
125
°C
Table 2. Electrical Characteristics
VDD = 5 V; GND = 0 V; TA = –40 to +125 °C; typical specs at 25 °C; TJ = –40 to +140 °C
Parameter
Symbol
Test Condition
Min
DC Parameters
Supply Voltage
VDD (VDD–GND)
3
Supply Current
IDD Output high or low (VDD = 5 to 30 V)
—
Input Current Threshold IF(TH) Si87xxA devices
—
Si87xxB devices
—
Si87xxC devices
—
Input Current Hystere- IHYS Si87xxA devices
—
sis
Si87xxB devices
—
Si87xxC devices
—
Input Forward Voltage VF(OFF) Measured at ANODE with respect to
—
(OFF)
CATHODE.
Input Forward Voltage VF(ON) Measured at ANODE with respect to 1.6
(ON)
CATHODE.
Input Capacitance
CI f = 100 kHz
VF = 0 V,
—
VF = 2 V
—
Logic Low Output
VOL IOL =3 mA, VDD = 3.3 or 5 V
—
Voltage
IOL =13 mA, VDD = 5.5 V
—
Logic High Output
IOH VDD = VOUT = 5.5 V
—
Current
VDD = VOUT = 24 V
—
Peak Output Current
IOPK Peak DC collector current drive
—
(VDD = 5 V)
Output Low Impedance ROL
—
Pull-up Resistor
RPU Using internal pull-up
—
Enable High Min
VEH
2
Enable Low Max
VEL
—
Enable High Current
IEH VDD = VEH = 5 V
—
Draw
Enable Low Current
IEL VDD =5 V, VEL = 0 V
—
Draw
Typ
—
—
—
—
—
0.17
0.34
0.17
—
—
15
15
—
—
—
—
50
—
20
—
—
20
–10
Max Unit
30
V
1.7
mA
1.8
mA
3.6
mA
1.8
mA
—
mA
—
mA
—
mA
1
V
2.8
V
—
pF
—
pF
0.4
V
0.7
V
0.5
µA
1
µA
—
mA
54
—
k
30
V
0.8
V
—
µA
0
µA
4
Rev. 1.31