NTE888 View Datasheet(PDF) - NTE Electronics

Part Name

Description

Manufacturer

NTE888

Integrated Circuit Low Power Programmable Operational Amplifier

NTE Electronics 

Electrical Characteristics: (VCC = +15V, VEE = –15V, ISET = 15µA, TA = +25°C unless other–

wise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Input Offset Voltage

VIO RS ≤ 10kΩ

– 2 6 mV

0° ≤ TA ≤ +70°C – – 7.5 mV

Offset Voltage Adjustment Range VIOR

– 18 – mV

Input Offset Current

IIO

– 2 25 nA

TA = +70°C

– – 25 nA

TA = 0°C

– – 40 nA

Input Bias Current

IIB

– 15 50 nA

TA = +70°C

– – 50 nA

TA = 0°C

– – 100 nA

Input Resistance

ri

– 5 – MΩ

Input Capacitance

ci

– 2 – pF

Input Voltage Range

VID 0° ≤ TA ≤ +70°C

±10 – –

V

Large Signal Voltage Gain

AVOL RL ≥ 5kΩ, VO = ±10V

50k 400k – V/V

RL ≥ 75kΩ, VO = ±10V,

0° ≤ TA ≤ +70°C

50k – – V/V

Output Voltage Swing

VO RL ≥ 5kΩ

±10 ±13 –

V

RL ≥ 75kΩ, 0° ≤ TA ≤ +70°C

±10 – –

V

Output Resistance

ro

– 1 – kΩ

Output Short–Circuit Current

Ios

– 12 – mA

Common–Mode Rejection Ratio CMRR RL ≤ 10kΩ, 0° ≤ TA ≤ +70°C

70 90 – dB

Supply Voltage Rejection Ratio PSRR RL ≤ 10kΩ, 0° ≤ TA ≤ +70°C

– 25 200 µV/V

Supply Current

ICC, IEE

– 160 190 µA

0° ≤ TA ≤ +70°C

– – 200 µA

Power Dissipation

PD

–

5.7 mW

0° ≤ TA ≤ +70°C

– – 6.0 mW

Transient Response (Unity Gain)

Rise Time

tTLH Vin = 20mV, RL ≥ 5kΩ, CL = 100pF – 0.35 – µs

Overshoot

OS

– 10 – %

Slew Rate

SR RL ≥ 5kΩ

– 0.8 – V/µs

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