1PS79SB30,135 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
1PS79SB30,135 Datasheet PDF : 9 Pages
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NXP Semiconductors
1PS79SB30
Schottky barrier single diode
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
1PS79SB30
SOD523
Description
plastic surface-mounted package; 2 leads
Version
SOD523
4. Marking
Table 4. Marking codes
Type number
1PS79SB30
Marking code
G1
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR
reverse voltage
IF
forward current
IFRM
repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward
tp = 8.3 ms; Tj(init) = 25 °C; half sine
current
wave
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Min Max Unit
-
40
V
-
200 mA
-
300 mA
-
1
A
-
150 °C
-65 150 °C
-65 150 °C
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1]
-
-
450 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
1PS79SB30
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2012
© NXP B.V. 2012. All rights reserved
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