2SC2270B View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SC2270B

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC2270

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.1A

VBE

Base-emitter voltage

IC=4A ; VCE=2V

ICBO

Collector cut-off current

VCB=40V; IE=0

IEBO

Emitter cut-off current

VEB=8V; IC=0

hFE-1

DC current gain

IC=0.5A ; VCE=2V

hFE-2

DC current gain

IC=4A ; VCE=2V

fT

Transition frequency

IC=0.5A ; VCE=2V

COB

Collector output capacitance

IE=0;f=1MHz ; VCB=10V

MIN TYP. MAX UNIT

20

V

8

V

1.0

V

1.5

V

0.1

µA

0.1

µA

140

450

70

100

MHz

40

pF

hFE-1 Classifications

A

B

C

140-240 200-330 300-450

2

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