JANTX2N3507A View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
JANTX2N3507A Datasheet PDF : 6 Pages
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2N3506 thru 2N3507A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
IC = 10 mA
Collector-Emitter Cutoff Current
VCE = 40 V; VEB = 4 V
VCE = 60 V; VEB = 4 V
Collector-Base Breakdown Voltage
IC = 100 µA
Emitter-Base Breakdown Voltage
IE = 10 µA
Symbol Min. Max. Unit
2N3506 V(BR)CEO
40
V
2N3507
50
2N3506
I CEX
2N3507
1.0
µA
1.0
2N3506
60
2N3507 V(BR)CBO
80
V
V (BR)EBO
5
V
ON CHARACTERISTICS (1)
Parameters / Test Conditions
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1 V
Forward-Current Transfer Ratio
IC = 1.5 A, VCE = 2 V
Forward-Current Transfer Ratio
IC = 2.5 A, VCE = 3 V
Forward-Current Transfer Ratio
IC = 3.0 A, VCE = 5 V
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1.0 V @ -55 oC
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 2.0 V @ -55 oC
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA
Collector-Emitter Saturation Voltage
IC = 1.5 A, IB = 150 mA
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage
IC = 1.5 A, IB = 150 mA
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506A
2N3507A
Symbol
h FE
h FE
h FE
h FE
h FE
h FE
V CE(sat)
Min.
50
35
40
30
30
25
25
20
25
17
25
17
Max.
250
175
200
150
0.5
Unit
V
V CE(sat)
1.0
V
V CE(sat)
1.5
V
V BE(sat)
1.0
V
V BE(sat)
0.8
1.3
V
V BE(sat)
2.0
V
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
T4-LDS-0016, Rev. 2 (111682)
©2011 Microsemi Corporation
Page 3 of 6
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