JANTX2N3506E3 View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

Manufacturer

JANTX2N3506E3

NPN MEDIUM POWER SILICON TRANSISTOR

Microsemi Corporation 

2N3506 thru 2N3507A

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Magnitude of Common Emitter Small-Signal Short-

Circuit Forward Current Transfer Ratio

IC = 100 mA, VCE = 5 V, f = 20 MHz

Output Capacitance

VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Input Capacitance

VEB = 3.0 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz

SWITCHING CHARACTERISTICS (2)

Parameters / Test Conditions

Delay Time

IC = 1.5 A, IB1 = 150 mA

Rise Time

IC = 1.5 A, IB1 = 150 mA

Storage Time

IC = 1.5 A, IB1 = IB2 = 150 mA

Fall Time

IC = 1.5 A, IB1 = IB2 = 150 mA

Symbol Min. Max.

|h fe |

3.0

15

C obo

C ibo

40

300

Symbol

td

Min.

Max.

15

tr

30

ts

55

tf

35

Unit

pF

pF

Unit

ns

ns

ns

ns

(2) Consult MIL-PRF-19500/349 for additional infornation.

T4-LDS-0016, Rev. 2 (111682)

©2011 Microsemi Corporation

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