STD2N62K3(2018) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD2N62K3
(Rev.:2018)

N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages

STMicroelectronics 

STD2N62K3, STF2N62K3, STU2N62K3

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

2.2

-

A

8.8

VSD (2)

Forward on voltage

ISD = 2.2 A, VGS = 0 V

-

trr

Reverse recovery time

ISD = 2.2 A, di/dt = 100 A/µs

Qrr

IRRM

Reverse recovery charge VDD = 60 V (see Figure 18. Test circuit for

-

inductive load switching and diode recovery

Reverse recovery current times)

1.6

V

200

ns

0.9

μC

9

A

trr

Reverse recovery time

ISD = 2.2 A, di/dt = 100 A/µs

240

ns

Qrr

Reverse recovery charge VDD = 60 V, Tj = 150 °C(see Figure 18. Test

-

1.15

μC

circuit for inductive load switching and

IRRM

Reverse recovery current diode recovery times)

10

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

Symbol

V(BR)GSO

Table 8. Gate-source Zener diode

Parameter

Gate-source breakdown

voltage

Test conditions

Igs = ±1 mA, ID = 0 A

Min. Typ. Max. Unit

±30

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for

additional external componentry.

DS7248 - Rev 3

page 4/27

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