IRFF130 Datasheet PDF - International Rectifier

IRFF130 View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFF130

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)

International Rectifier

IRFF130 Datasheet PDF : 7 Pages

1 2 3 4 5 6 7

IRFF130

JANTX2N6796/JANTXV2N6796

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Symbol

BVDSS

BVDSS/TJ

RDS(on)

VGS(th)

Gfs

IDSS

IGSS

QGS

QGD

td(on)

td(off)

Ls +LD

Ciss

Coss

Crss

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

100

–––

2.0

3.0

–––

Typ. Max.

––– –––

0.10 –––

––– 0.18

––– 0.195

––– 4.0

––– –––

––– 25

––– 250

––– 100

––– -100

––– 28.51

––– 6.34

––– 16.59

––– 30

––– 75

––– 40

––– 45

7.0 –––

650 –––

240 –––

44 –––

Units

Test Conditions

V VGS = 0V, ID = 1.0mA

V/°C Reference to 25°C, ID = 1.0mA



VGS = 10V, ID2 = 5.0A 

VGS = 10V, ID1 = 8.0A 

V VDS = VGS, ID = 250µA

S VDS = 15V, ID2 = 5.0A 

µA

VDS =80 V, VGS = 0V

VDS = 80V,VGS = 0V,TJ =125°C

VGS = 20V

VGS = -20V

ID1 = 8.0A

nC VDS = 50V

VGS = 10V

VDD = 50V

ID1 = 8.0A

RG = 7.5

VGS = 10V

Measured from Drain lead (6mm / 0.25 in

from package) to Source lead (6mm/ 0.25

nH in from package) with Source wire

internally bonded from Source pin to Drain

VGS = 0V

pF VDS = 25V

ƒ = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode) ––– ––– 8.0 A

ISM

Pulsed Source Current (Body Diode) 

––– ––– 32

VSD

Diode Forward Voltage

––– ––– 1.5 V TJ = 25°C,IS = 8.0A, VGS = 0V

trr

Reverse Recovery Time

––– ––– 300 ns TJ = 25°C, IF = 8.0A, VDD ≤ 50V

Qrr

Reverse Recovery Charge

––– ––– 3.0 µC di/dt = 100A/µs 

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Thermal Resistance

Symbol

Parameter

RJC

Junction-to-Case

RJA

Junction-to-Ambient (Typical Socket Mount)

Min.

–––

Footnotes:

Repetitive Rating; Pulse width limited by maximum junction temperature.

VDD = 25V, starting TJ = 25°C, Peak IL = 8.0A.

 ISD  8.0A, di/dt  140A/µs, VDD  100V, TJ  150°C, Suggested RG = 7.5 Ω

 Pulse width  300 µs; Duty Cycle  2%

Typ.

–––

Max.

5.0

175

Units

°C/W

International Rectifier HiRel Products, Inc.

2018-11-20

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