2N7002PW,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002PW,115 Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002PW
60 V, 0.3 A N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
Simplified outline Graphic symbol
3
D
1
2
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2N7002PW SC-70
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
2N7002PW
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
X8*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
VGS
gate-source voltage
-
ID
drain current
VGS = 10 V
Tamb = 25 °C
-
Tamb = 100 °C
-
IDM
peak drain current
Tamb = 25 °C;
-
single pulse; tp ≤ 10 μs
Version
SOT323
Max Unit
60
V
±20
V
300
mA
180
mA
1.2
A
2N7002PW_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 April 2010
© NXP B.V. 2010. All rights reserved.
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