2N7002PW,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002PW,115 Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002PW
60 V, 0.3 A N-channel Trench MOSFET
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation Tamb = 25 °C
[1] -
[2] -
Tsp = 25 °C
-
Tj
junction temperature
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Source-drain diode
IS
source current
Tamb = 25 °C
-
ISM
peak source current
Tamb = 25 °C;
-
single pulse; tp ≤ 10 μs
Max Unit
200
mW
250
mW
570
mW
150
°C
+150 °C
+150 °C
300
mA
1.2
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
120
Pder
(%)
80
017aaa001
120
Ider
(%)
80
017aaa002
40
40
0
−75
−25
25
75
125
175
Tamb (°C)
Fig 1.
Pder
=
--------P----t-o---t------- × 100 %
Pt o t ( 25 ° C )
Normalized total power dissipation as a
function of ambient temperature
0
−75
−25
25
75
125
175
Tamb (°C)
Fig 2.
Ider
=
--------I--D--------- × 100 %
I D ( 25 ° C )
Normalized continuous drain current as a
function of ambient temperature
2N7002PW_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 April 2010
© NXP B.V. 2010. All rights reserved.
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