2N7002PW,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002PW,115 Datasheet PDF : 16 Pages
| |||
NXP Semiconductors
2N7002PW
60 V, 0.3 A N-channel Trench MOSFET
1.0
ID
(A)
0.8
0.6
0.4
0.2
017aaa021
(1)
(2)
2.4
a
1.8
1.2
0.6
017aaa022
0.0
0.0
1.0
2.0
3.0
4.0
5.0
VGS (V)
0.0
−60
0
60
120
180
Tamb (°C)
VDS > ID × RDSon
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
a = --------R----D---S---o---n--------
R D S o n ( 25 ° C )
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
3.0
VGS(th)
(V)
2.0
1.0
017aaa023
(1)
(2)
(3)
102
(1)
C
(pF)
(2)
10
(3)
017aaa024
0.0
−60
0
60
120
180
Tamb (°C)
1
10−1
1
10
102
VDS (V)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
2N7002PW_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 April 2010
© NXP B.V. 2010. All rights reserved.
8 of 16
Share Link: 