2SB1205 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
2SB1205 Datasheet PDF : 9 Pages
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2SB1205
Continued from preceding page.
Parameter
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
Unit
--0.5
A
1
W
10
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--20V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=500mA
VCE=--2V, IC=--4A
VCE=--5V, IC=--200mA
VCB=--10V, f=1MHz
IC=--3A, IB=--60mA
IC=--3A, IB=--60mA
IC=--10μA, IE=0A
IC=--1mA, RBE=∞
IE=--10μA, IC=0A
See specified Test Circuit.
Ratings
min
typ
100*
60
--25
--20
--5
320
60
--250
--1.0
40
200
10
max
--500
--500
400*
--500
--1.3
Unit
nA
nA
MHz
pF
mV
V
V
V
V
ns
ns
ns
* : The 2SB1205 is classified by 500mA hFE as follows :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
RB
RL
50Ω
+
100μF
VBE=5V
IC=10IB1= --10IB2= --2A
+
470μF
VCC= --10V
Ordering Information
Device
2SB1205S-E
2SB1205T-E
2SB1205S-TL-E
2SB1205T-TL-E
Package
TP
TP
TP-FA
TP-FA
Shipping
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
memo
Pb Free
No.2114-2/9
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