SFH507-56 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SFH507-56 Datasheet PDF : 6 Pages
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SFH 507
Sensitivity vs. electric field disturbance
Ee min = f (E), field strength of disturbance,
f = f0
1.0
OHF00217
mW/m 2
E e min
0.8
f (E) = f 0
Vertical directivity ϕy
-10
0
ϕ
-20
1.6
1.4
10 OHF00246
20
1.2
0.6
-30
1.0
30
0.4
f (E) = 10 kHz
0.2
0
0 0.4 0.8 1.2 kV/m 2.0
E
0.8
-40
40
0.6
-50
0.4
50
-60
60
-70
0.2
70
-80
80
-90
90
-0.6 -0.4 -0.2 0 0.2 0.4 0.6
Relative luminous sensitivity
Srel = f (λ), TA = 25 oC
1.0
OHF02193
S rel
0.8
Horizontal directivity ϕx
-10
0
10 OHF00247
ϕ
-20
1.6
20
1.4
1.2
0.6
-30
1.0
30
0.4
0.2
0.0
800 850 900 950 1000 1050 nm 1150
λ
Output pulse
Ton, Toff = f(Ee)
1.0
ms
Ton,Toff
0.8
OHF00245
Ton
0.8
-40
40
0.6
-50
0.4
50
-60
60
-70
0.2
70
-80
80
-90
90
-0.6 -0.4 -0.2 0 0.2 0.4 0.6
Relative sensitivity Ee min/Ee = f (f / f0)
f = f0 ± 5 %, ∆f (3 dB) = f0/7
1.0
OHF00219
E e min /E e
0.8
0.6
0.6
Toff
0.4
0.4
λ = 950 nm
0.2
0.2
0.0
10
-1
10 0
10 1
10 2 mW/m 2 10 4
Ee
Semiconductor Group
0
0.7 0.8 0.9 1.0 1.1 1.2 1.3
f /f0
5
Sensitivity vs. bright ambient
Ee min = f (E)
10 2
OHF00215
Correlation with ambient light sources
mW/m2 (disturbance effect) : 10 W/m2 ~_ 1.4 klx
E e min
(stand. illum. A, T= 2855 K) ~_ 8.2 klx
(daylight, T = 5900 K)
10 1
10 0
10
-1
10
-2
Ambient, λ = 950 nm
10 -1
10 0
101 W/m 2 102
E
Sensitivity vs. supply volt. disturbances,
Ee min = f (∆VS RMS)
10 1
OHF00214
mW/m2
E e min
f =f0
10 kHz 1 kHz
10 0
100 Hz
10
-1
10
-2
10 -1
10 0
10 1
102 mV 103
∆V s RMS
Sensitivity vs. dark ambient
Tp out = f (Ee)
300
OHF00216
µs
Tp out
250
200
Input burst duration
150
100
λ = 950 nm
50
0
10
-1
10 0
10 1
102 mW/m 2 104
Ee
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