2SC4409(2001) View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SC4409
(Rev.:2001)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Toshiba 

2SC4409

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

fT

Cob

VCB = 80 V, IE = 0

VEB = 6 V, IC = 0

IC = 10 mA, IB = 0

VCE = 2 V, IC = 100 mA

VCE = 2 V, IC = 1.5 A

IC = 1 A, IB = 0.05 A

IC = 1 A, IB = 0.05 A

VCE = 2 V, IC = 100 mA

VCB = 10 V, IE = 0, f = 1 MHz

Min Typ. Max Unit





0.1

µA





0.1

µA

50





V

120



400

40









0.5

V





1.2

V



100



MHz



14



pF

Turn-on time

Switching time Storage time

Fall time

ton

Output 

0.1



20 µs Input IB1

tstg

IB1

IB2



0.5



µs

IB2

30 V

IB1 = −IB2 = 0.05 A,

tf

Duty cycle <= 1%



0.1



Marking

Type name

KA

2

2001-10-29

Share Link: