2SD1268 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD1268 Datasheet PDF : 3 Pages
| |||
Power Transistors
2SD1268
Silicon NPN epitaxial planar type
For power switching
Unit: mm
10.0±0.2
4.2±0.2
■ Features
5.5±0.2
2.7±0.2
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
φ 3.1±0.1
• Large collector current IC
• Full-pack package which can be installed to the heat sink with one screw.
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
e Collector-base voltage (Emitter open) VCBO
130
V
pe) Collector-emitter voltage (Base open) VCEO
80
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
7
V
sta tinu Collector current
IC
3
A
a e cycle iscon Peak collector current
ICP
6
A
life d, d Collector power
PC
30
W
n u duct type dissipation
Ta = 25°C
2.0
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg −55 to +150 °C
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
ain onludes foell,opwliannged disco ■ Electrical Characteristics TC = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
Min Typ Max Unit
c tinued ance Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0
80
M is con inten Collector-base cut-off current (Emitter open) ICBO VCB = 100 V, IE = 0
/Dis ma Emitter-base cut-off current (Collector open) IEBO VEB = 5 V, IC = 0
D ance type, Forward current transfer ratio
hFE1 VCE = 2 V, IC = 0.1 A
45
ten ce hFE2 * VCE = 2 V, IC = 0.5 A
60
Main tenan Collector-emitter saturation voltage
VCE(sat) IC = 2 A, IB = 0.1 A
ain Base-emitter saturation voltage
VBE(sat) IC = 2 A, IB = 0.1 A
ed m Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
(plan Turn-on time
ton
IC = 0.5 A, IB1 = 50 mA, IB2 = −50 mA
V
10
µA
50
µA
260
0.5
V
1.5
V
30
MHz
0.5
µs
Storage time
tstg
VCC = 50 V
2.5
µs
Fall time
tf
0.15
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180 130 to 260
Publication date: January 2003
SJD00182BED
1
Share Link: 