2SD1478ARL View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD1478ARL Datasheet PDF : 4 Pages
| |||
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1478A
Silicon NPN epitaxial planar type darlington
For low frequency amplification
Features
Forward current transfer ratio hFE is designed high, which is appropriate to the
driver circuit of motors and printer hammer.
/ A shunt resistor is omitted from the driver.
e tage. Absolute Maximum Ratings Ta = 25°C
s Parameter
Symbol Rating
Unit
c cle Collector-base voltage (Emitter open)
VCBO
60
V
n d cy Collector-emitter voltage (Base open)
VCEO
50
V
life Emitter-base voltage (Collector open)
VEBO
5
V
a e uct Collector current
IC
500
mA
n u rod Peak collector current
P Collector power dissipation
te tin four n. Junctiontemperature
ICP
750
mA
PC
200
mW
Tj
150
°C
ing type atio Storage temperature
Tstg -55 to +150 °C
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: 2O
Internal Connection
C
B
E
in n llow nce pe ped form Electrical Characteristics Ta = 25°C±3°C
fo na ty ty t in Parameter
Symbol
Conditions
Min Typ Max
a o des inte nce ued pe tes n Collector-base voltage (Emitter open)
VCBO IC = 100 mA, IE = 0
60
c inclu d ma tena ntin d ty t la c/e Collector-emitter voltage (Base open)
VCEO IC = 1 mA, IB = 0
50
d e in co ue ou t/s Emitter-base voltage (Collector open)
VEBO IE = 100 mA, IC = 0
5
M is tinue lan ma dis tin ab .ne Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0
100
n p ed con RL nic Emitter-base cutoff current (Collector open)
co lan dis g U aso Forward current transfer ratio *1, *2
D /Dis p win an Collector-emitter saturation voltage *1
ce llo ://p Base-emitter saturation voltage *1
IEBO
hFE
VCE(sat)
VBE(sat)
VEB = 4 V, IC = 0
VCE = 10 V, IC = 500 mA
IC = 500 mA, IB = 0.5 mA
IC = 500 mA, IB = 0.5 mA
4 000
100
20 000
2.5
3.0
an it fo ttp Transition frequency
fT VCB = 10 V, IE = -50 mA, f = 200 MHz
200
n is h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
inte v 2. *1: Pulse measurement
a se *2: Rank classification
M Plea Rank
Q
R
Unit
V
V
V
nA
nA
V
V
MHz
hFE
4000 to 10000 8000 to 20000
Publication date: October 2008
SJC00414AED
1
Share Link: 