2SD14850P View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD14850P Datasheet PDF : 3 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD1485
Silicon PNP triple diffusion planar type
Unit: mm
For high power amplification
Complementary to 2SB1054
■ Features
/ • Excellent collector current IC characteristics of forward current
transfer ratio hFE
e • Wide safe operation area
e. • High transition frequency fT
c tag • Full-pack package which can be installed to the heat sink with one
n d s screw
a e lifecycle ■ Absolute Maximum Ratings TC = 25°C
t Parameter
Symbol Rating
Unit
n u duc Collector-base voltage (Emitter open) VCBO
100
V
ro Collector-emitter voltage (Base open) VCEO
100
V
te tin ur P Emitter-base voltage (Collector open) VEBO
5
V
g fo e . Collector current
IC
5
A
win typ tion Peak collector current
ICP
8
A
in n follo nce e d a Collector power dissipation
PC
60
W
es tena typ type form / Ta = 25°C
3.0
a o lud in ce d t in /en Junction temperature
Tj
150
°C
c ed inc ed ma tenan tinue type lates o.jp Storage temperature
Tstg −55 to +150 °C
15.0±0.3
11.0±0.2
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
M is tinu plan main discontinued about sonic.c ■ Electrical Characteristics TC = 25°C ± 3°C
con ed on L na Parameter
Symbol
Conditions
is lan isc UR .pa Base-emitter voltage
e/D p d ing icon Collector-base cutoff current (Emitter open)
Danc llow em Emitter-base cutoff current (Collector open)
ten fo .s Forward current transfer ratio
Main lease vihstittp://www Collector-emitter saturation voltage
P Transition frequency
VBE
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)
fT
VCE = 5 V, IC = 3 A
VCB = 100 V, IE = 0
VEB = 3 V, IC = 0
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 3 A
IC = 3 A, IB = 0.3 A
VCE = 5 V, IC = 0.5 A, f = 1 MHz
Min Typ Max Unit
1.8
V
50
µA
50
µA
20
60
200
20
2.0
V
20
MHz
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
90
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
60 to 120 100 to 200
Publication date: September 2003
SJD00199BED
1
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