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Part Name
Description
SGW20N60(2009) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SGW20N60
(Rev.:2009)
Fast IGBT in NPT-technology
Infineon Technologies
SGW20N60 Datasheet PDF : 12 Pages
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SGP20N60
SGW20N60
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=25
°
C,
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
R
G
=16
Ω
,
L
σ
1)
=180nH,
C
σ
1)
=900pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
36
30
225
54
0.44
0.33
0.77
Unit
max.
46 ns
36
270
65
0.53 mJ
0.43
0.96
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=150
°
C
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
R
G
=16
Ω
,
L
σ
1)
=180nH,
C
σ
1)
=900pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
36
30
250
63
0.67
0.49
1.12
Unit
max.
46 ns
36
300
76
0.81 mJ
0.64
1.45
1)
Leakage inductance
L
σ
an d Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.4 Nov 09
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