SGW20N60 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
SGW20N60 Datasheet PDF : 12 Pages
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Typ. gate charge
VGE = f (QGate)
parameter: IC = 20 A
25
V
15
Preliminary data
120 V
480 V
SGP20N60, SGB20N60, SGW20N60
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 4
pF
Ciss
10 3
10
10 2
Coss
5
Crss
0
0 20 40 60 80 100 120 nC 150
QGate
Short circuit withstand time
tsc = f (VGE)
par.: VCE = 600 V, start at Tj = 25 °C
25
µs
15
10 1
0
5 10 15 20 25 30 V 40
VCE
Typ. short circuit current
ICsc = f (VGE)
par.: VCE ≤ 600 V, TC = 25 °C, Tj ≤ 150 °C
350
A
250
200
150
10
100
5
50
0
10
11
12
13
V
15
VGE
0
10
11
12
13
14
15
16
17
18
V
20
VGE
Semiconductor Group
10
02 / 1999
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