SGW20N60 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

SGW20N60

Fast S-IGBT in NPT-Technology

Siemens AG 

Preliminary data

SGP20N60, SGB20N60, SGW20N60

Fast S-IGBT in NPT-Technology

• 75 % lower Eoff compared to previous generation

combined with low conduction losses

• Short circuit withstand time 10 µs

• Designed for moderate and high frequency applications:

- SMPS and PFC up to 150 kHz

- Inverter, Motor controls

• NPT-Technology for 600V applications offers:

- tighter parameter distribution

- higher ruggedness, temperature stable behaviour

- parallel switching capability

Type

SGP20N60

SGB20N60

SGW20N60

VCE

600 V

IC

20 A

VCE(sat) Tj Package

2.4 V 150 °C TO-220AB

TO-263AB

TO-247AC

Ordering Code

Q67041-A4712-A2

Q67041-A4712-A3

Q67040-S4236

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

VCE

DC collector current

IC

TC = 25 °C

TC = 100 °C

Pulsed collector current, tp limited by Tjmax

Gate-emitter voltage

Avalanche energy, single pulse

IC = 20 A, VCC = 50 V, RGE = 25 Ω,

start at Tj = 25 °C

ICpuls

VGE

EAS

Short circuit withstand time 1)

tsc

VGE = 15 V, VCC = 600 V, Tj ≤ 150 °C

Power dissipation

Ptot

TC = 25 °C

Operating junction and storage temperature

Tj , Tstg

Soldering temperature, 1.6mm from case for 10s -

Value

600

40

20

80

±20

115

10

178

-55...+150

260

Unit

V

A

V

mJ

µs

W

°C

1) allowed number of short circuits: <1000; time between short circuits: >1s

Semiconductor Group

1

02 / 1999

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