SGW20N60 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
SGW20N60 Datasheet PDF : 12 Pages
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Preliminary data
Thermal Resistance
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
TO-220AB
TO-247AC
SMD version, device on PCB: 1)
TO-263AB
SGP20N60, SGB20N60, SGW20N60
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
-
-
0.7 K/W
-
-
62
-
-
40
-
-
40
Electrical Characteristics, at Tj =25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Collector-emitter breakdown voltage
VGE = 0 V, IC = 500 µA
Collector-emitter saturation voltage
VGE = 15 V, IC = 20 A, Tj = 25 °C
VGE = 15 V, IC = 20 A, Tj = 150 °C
Gate-emitter threshold voltage
IC = 300 µA, VCE = VGE
Zero gate voltage collector current
VCE = 600 V, VGE = 0 V, Tj = 25 °C
VCE = 600 V, VGE = 0 V, Tj = 150 °C
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
V(BR)CES 600
-
-V
VCE(sat)
1.6
-
VGE(th)
3
2
2.5
2.4 2.9
4
5
ICES
IGES
µA
-
-
40
-
-
2500
-
-
100 nA
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick)
copper area for collector connection. PCB is vertical without blown air.
Semiconductor Group
2
02 / 1999
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