SGP20N60, SGB20N60, SGW20N60
Electrical Characteristics, at Tj =25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Transconductance
VCE = 20 V, IC = 20 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
gfs
Ciss
Coss
Crss
-
14
-S
- 1100 1320 pF
- 107 128
-
63 75
Characteristics
Gate charge
VCC = 480 V, VGE = 15 V, IC = 20 A
Internal emitter inductance
measured 5mm from case
QGate
LE
- 100 130 nC
-
7
- nH
Safe Operating Area Characteristics
Short circuit collector current 1)
-
-
-
200 A
VCE ≤ 600 V, VGE = 15 V, tsc ≤ 10 µs,
Tj ≤ 150 °C
Turn off safe operating area
-
-
-
80
VCE ≤ 600 V, Tj ≤ 150 °C
1) allowed number of short circuits: <1000; time between short circuits: >1s
Semiconductor Group
3
02 / 1999