SGW20N60 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

SGW20N60

Fast S-IGBT in NPT-Technology

Siemens AG 

Preliminary data

SGP20N60, SGB20N60, SGW20N60

Switching Characteristics, Inductive Load (Diode: BUP602D), at Tj = 150 °C

Parameter

Symbol

Values

min. typ. max.

Characteristics

Turn-on delay time

VCC = 400 V, VGE = 15 V, IC = 20 A,

RGon = 16 Ω

Rise time

VCC = 400 V, VGE = 15 V, IC = 20 A,

RGon = 16 Ω

td(on)

-

22 27

tr

-

35 42

Turn-off delay time

VCC = 400 V, VGE = 0 V, IC = 20 A,

RGoff = 16 Ω

Fall time

VCC = 400 V, VGE = 0 V, IC = 20 A,

RGoff = 16 Ω

td(off)

- 250 300

tf

-

63 76

Turn-on energy 1)

VCC = 400 V, VGE = 15 V, IC = 20 A,

RGon = 16 Ω

Eon

- 1.18 1.36

Turn-off energy

VCC = 400 V, VGE = 0 V, IC = 20 A,

RGoff = 16 Ω

Eoff

- 0.49 0.64

Total switching energy 1)

VCC = 400 V, VGE = 0/+15 V, IC = 20 A,

RG = 16 Ω

Ets

- 1.67 2

Unit

ns

mJ

1) Eon and Ets include BUP602D diode commutation losses.

Semiconductor Group

5

02 / 1999

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