SGW20N60 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
SGW20N60 Datasheet PDF : 12 Pages
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Preliminary data
SGP20N60, SGB20N60, SGW20N60
Typ. collector current
IC = f (f)
parameter: D = 0.5, Tj ≤ 150 °C
100
A
TC = 80 °C
80
70 TC = 110 °C
60
TC = 80 °C
50
40
TC = 110 °C
30
20
Safe operating area
IC = f (VCE)
parameter: D = 0, TC = 25°C, Tj ≤ 150°C
10 3
A
10 2
10 1
10 0
10 -1
tp= 4µs
15µs
50µs
200µs
1ms
DC
10 - - - square wave peak current
triangle wave peak current
0
10
1
10 2
10 3
10 4
Power dissipation
Ptot = f (TC)
parameter: Tj ≤ 150 °C
SGP20N60
190
W
160
10 5 Hz 10 6
f
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 °C
160
TC
Semiconductor Group
10
-2
10
0
10 1
10 2
10 3 V 10 4
VCE
Collector current
IC = f (TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
50
A
40
35
30
25
20
15
10
5
0
0
20 40 60 80 100 120 °C 160
TC
6
02 / 1999
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