SGW20N60 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
SGW20N60 Datasheet PDF : 12 Pages
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Preliminary data
SGP20N60, SGB20N60, SGW20N60
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
65
A
55
50
45
20V
15V
40
13V
11V
35
9V
7V
30
5V
25
20
15
10
5
0
0
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 10 V
50
A
25 C
40
35
30
25
20
15
10
5
0
0
2
4
Semiconductor Group
6
V
10
VGE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 150 °C
65
A
55
50
45
20V
15V
40
13V
11V
35
9V
7V
30
5V
25
20
15
10
5
0
0
1
2
3
Gate-emitter threshold voltage
VGE(th) = f (Tj)
parameter: IC = 0.3 mA
V
5
VCE
6.0
V
5.0
4.5
4.0
max.
3.5
typ.
3.0
2.5
min.
2.0
-60
-20
20
60
100 °C 160
Tj
7
02 / 1999
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