SGW20N60 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

SGW20N60

Fast S-IGBT in NPT-Technology

Siemens AG 

Preliminary data

Typ. switching time

t = f (IC) , inductive load, Tj = 150°C

par.: VCE = 400 V, VGE = 0/+15 V, RG = 16 Ω

10 3

ns

td(off)

SGP20N60, SGB20N60, SGW20N60

Typ. switching time

t = f (RG) , inductive load, Tj = 150°C

par.: VCE = 400 V, VGE = 0/+15 V, IC = 20 A

10 3

td(off)

ns

10 2

tf

10 2

tf

tr

10 1

0

td(on)

5 10 15 20 25 30 35 A 45

IC

Typ. switching time

t = f (Tj) , inductive load , VCE = 400 V

VGE = 0/+15 V, IC = 20 A, RG = 16 Ω

10 3

tr

td(on)

10 1

0

10

20

30

40 Ω

60

RG

Typ. collector-emitter saturation voltage

VCEsat = f (Tj)

parameter: VGE = 15 V

4.0

ns

td(off)

10 2

tf

tr

td(on)

V

3.0

IC = 40 A

2.5

IC = 20 A

2.0

1.5

10 1

0

20 40 60 80 100 120 °C 160

Tj

Semiconductor Group

8

1.0

-60

-20

20

60

100 °C 160

Tj

02 / 1999

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