SGW20N60 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
SGW20N60 Datasheet PDF : 12 Pages
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Preliminary data
Typ. switching losses
E = f (IC) , inductive load, Tj = 150°C
par.: VCE = 400 V, VGE = 0/+15V, RG = 16 Ω
4.5
*) Eon and Ets include BUP602D
mWs diode commutation losses.
Ets*
3.5
3.0
Eon*
2.5
2.0
1.5
Eoff
1.0
0.5
0.0
0
5 10 15 20 25 30 35 A
45
IC
Typ. switching losses
E = f (Tj) , inductive load, VCE = 400 V,
VGE = 0/+15 V, IC = 20 A, RG = 16 Ω
2.0
*) Eon and Ets include BUP602D
mWs diode commutation losses.
1.6
1.4
Ets*
1.2
1.0
0.8
Eon*
0.6
0.4
Eoff
0.2
0.0
0
20 40 60 80 100 120 °C 160
Tj
Semiconductor Group
SGP20N60, SGB20N60, SGW20N60
Typ. switching losses
E = f (RG) , inductive load, Tj = 150°C
par.: VCE = 400 V, VGE = 0/+15 V, IC = 20 A
3.0
mWs
*) Eon and Ets include BUP602D
diode commutation losses.
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
Transient thermal impedance
ZthJC = f(tp)
parameter: D = tp / T
10 1
K/W
Ets*
Eon*
Eoff
Ω
60
RG
10 0
10 -1
10 -2
10 -3
single pulse
D=0.5
0.2
0.1
0.05
0.02
0.01
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
9
02 / 1999
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