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Part Name
Description
SPI15N65C3XKSA1 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SPI15N65C3XKSA1
CoolMOS Power Transistor
Infineon Technologies
SPI15N65C3XKSA1 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
9 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
= 15 A pulsed
parameter:
V
DD
10
9
120 V
8
7
480 V
6
5
4
3
2
1
0
0
20
40
60
Q
gate
[nC]
11 Avalanche energy
E
AS
=f(
T
j
);
I
D
=3 A;
V
DD
=50 V
SPI15N65C3
10 Forward characteristics of reverse diode
I
F
=f(
V
SD
)
parameter:
T
j
10
2
150 °C, 98%
25 °C
10
1
150 °C
25 °C, 98%
10
0
80
0
0.5
1
1.5
2
V
SD
[V]
12 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=0.25 mA
500
400
300
200
100
0
20
Rev. 2.0
60
100
140
T
j
[°C]
740
720
700
680
660
640
620
600
580
180
-50
-10
30
70
110
150
T
j
[°C]
page 6
2007-09-10
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