1PS70SB20,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
1PS70SB20,115 Datasheet PDF : 9 Pages
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NXP Semiconductors
1PS70SB20
Schottky barrier single diode
10. Characteristics
Table 7.
Symbol
VF
IR
Characteristics
Parameter
forward voltage
reverse current
Cd
diode capacitance
103
IF
(mA)
102 (1)
(2)
10
(3)
1
Conditions
IF = 500 mA; Tamb = 25 °C
VR = 35 V; Tamb = 25 °C
VR = 35 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tj = 100 °C
VR = 0 V; f = 1 MHz; Tamb = 25 °C
mbk578
10
IR
(mA)
1
10-1
10-2
Min Typ Max Unit
-
-
550 mV
-
-
100 µA
-
-
10
mA
60
-
90
pF
006aac893
(1)
(2)
(3)
10- 1
150
250
350
450
550
VF (mV)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 1. Forward current as a function of forward
voltage; typical values
10-3
0
10
20
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
30
40
VR (V)
Fig. 2. Reverse current as a function of reverse
voltage; typical values
1PS70SB20
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2012
© NXP B.V. 2012. All rights reserved
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