Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
í•œêµì–´
日本語
руÑÑкий
简体ä¸æ–‡
español
Part Name
Description
2N06L50 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
2N06L50
OptiMOS® Power-Transistor
Infineon Technologies
2N06L50 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
IPG20N06S2L-50
13 Avalanche energy
4)
E
AS
= f(
T
j
)
parameter:
I
D
150
14 Drain-source breakdown voltage
V
BR(DSS)
= f(
T
j
);
I
D
= 1 mA
65
125
62
5A
100
59
75
56
10 A
50
15 A
53
25
0
25
50
75 100 125 150 175
T
j
[°C]
50
-60 -20
20
60 100 140 180
T
j
[°C]
15 Typ. gate charge
4)
V
GS
= f(
Q
gate
);
I
D
= 20 A pulsed
parameter:
V
DD
16 Gate charge waveforms
12
V
GS
11 V
44 V
Q
g
10
8
6
V
g s(th)
4
2
Q
g (th)
0
0
3
6
9
12
15
Q
gate
[nC]
Q
gs
Rev. 1.0
page 7
Q
sw
Q
gd
Q
gate
2009-09-07
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]