4N0602 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
4N0602 Datasheet PDF : 9 Pages
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Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Conditions
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0V, V DS=25V,
f =1MHz
V DD=30V, V GS=10V,
I D=120A, R G=3.5Ω
-
12120 15750 pF
-
2980 3870
-
110
220
-
25
- ns
-
5
-
-
50
-
-
10
-
Q gs
-
63
85 nC
Q gd
V DD=48V, I D=120A,
-
15
30
Qg
V GS=0 to 10V
-
150
195
V plateau
-
5.2
-V
IS
I S,pulse
T C=25°C
V SD
V GS=0V, I F=100A,
T j=25°C
t rr
V R=30V, I F=50A,
di F/dt =100A/µs
-
-
120 A
-
-
480
-
0.9
1.3 V
-
190
- ns
Reverse recovery charge2)
Q rr
-
170
- nC
1) Current is limited by bondwire; with an R thJC = 0.8K/W the chip is able to carry 206A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 3
2009-07-01
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