MT8MTF51264HRZ View Datasheet(PDF) - Micron Technology

Part Name

Description

Manufacturer

MT8MTF51264HRZ

1.35V DDR3L-RS SDRAM SODIMM

Micron Technology 

4GB (x64, SR) 204-Pin DDR3L-RS SODIMM

Features

Table 2: Addressing

Parameter

Refresh count

Row address

Device bank address

Device configuration

Column address

Module rank address

4GB

8K

64K A[15:0]

8 BA[2:0]

4Gb (512 Meg x 8)

1K A[9:0]

1 S0#

Table 3: Part Numbers and Timing Parameters – 4GB Modules, Standard (Front Side) Layout

Base device: MT41K512M8,1 1.35V 4Gb DDR3L-RS SDRAM

Part Number2

Module

Density

Configuration

MT8MTF51264HSZ-1G6__

4GB

512 Meg x 64

MT8MTF51264HSZ-1G4__

4GB

512 Meg x 64

Module

Bandwidth

12.8 GB/s

10.6 GB/s

Memory Clock/

Data Rate

1.25ns/1600 MT/s

1.5ns/1333 MT/s

Clock Cycles

(CL-tRCD-tRP)

11-11-11

9-9-9

Table 4: Part Numbers and Timing Parameters – 4GB Modules, Reverse (Back Side) Layout

Base device: MT41K512M8,1 1.35V 4Gb DDR3L-RS SDRAM

Part Number2

Module

Density

Configuration

MT8MTF51264HRZ-1G6__

4GB

512 Meg x 64

MT8MTF51264HRZ-1G4__

4GB

512 Meg x 64

Module

Bandwidth

12.8 GB/s

10.6 GB/s

Memory Clock/

Data Rate

1.25ns/1600 MT/s

1.5ns/1333 MT/s

Clock Cycles

(CL-tRCD-tRP)

11-11-11

9-9-9

Notes: 1. The data sheet for the base device can be found on Micron’s web site.

2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.

Consult factory for current revision codes. Examples: MT8MTF51264HSZ-1G6E2

PDF: 09005aef84fc0fd3

mtf8c512x64hz_g0_h0.pdf - Rev. D 5/13 EN

2

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2012 Micron Technology, Inc. All rights reserved.

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